Staff Device Engineer

Name: HireFT
Author: HireFT

San Jose, United StatesOn-SiteFull-timePosted 2w ago

Job description

Responsibilities

Design and qualify high-voltage GaN power devices integrated in high performance and high reliability products (including automotive).
Perform device/process simulations and device layout for GaN power devices.
Assignments will include power device creation, fabrication and full characterization, and issuing technical reports.
Evaluate electrical / thermal performance and reliability of GaN power devices.
Prior experience in Si power device development is a plus.
Interact with other departments for best use of Company’s technologies and to support key customer requirements.

Requirements

B. Sc degree in Electrical Engineering with 8 years’ working experience or
M. Sc degree in Electrical Engineering with 6 years’ working experience or
Ph. D degree in Electrical Engineering with 3 years’ working experience
Proven track record of independently designing and taking into volume production of high-voltage GaN power devices
Sound understanding of semiconductor device physics, especially WBG
Proficient in TCAD simulation and CADENCE layout tools
Hands-on experience with high-voltage testing and data acquisition systems
Strong communication and collaboration skills

Job details are sourced from the employer's original posting.

About the company

Power Integrations is a leading provider of high-performance analog integrated circuits for power supply applications.